Effects of Cr-doping concentration on the structural, optical, and magnetic properties of ZnO thin films

被引：17

作者：

Fu, C. F. ^{[1
]}

Han, L. F. ^{[1
,2
]}

Liu, C. ^{[1
]}

Gao, Y. F. ^{[1
]}

机构：

[1] Northeast Petr Univ, Sch Elect Sci, Daqing 163318, Peoples R China

[2] Harbin Inst Technol, Sch Elect Engn & Automat, Harbin 150001, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 07期

关键词：

doping; ferromagnetism; magnetron sputtering; photoluminescence; thin films; ZnO; ROOM-TEMPERATURE FERROMAGNETISM; DOPED ZNO; MN; LEVEL;

D O I：

10.1002/pssa.201329014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cr-doped ZnO thin films have been prepared on silicon (100) substrates by a radio-frequency (RF) magnetron sputtering method. The crystallographic structures, optical, and magnetic properties of the thin films are investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and physical properties measurement system (PPMS), respectively. The XPS results confirm that the chemical-bonding state of the doped Cr ions is +3. XRD analyses reveal that the Cr ions successfully replace Zn atoms and incorporate into the crystal-lattice positions of ZnO. Magnetic measurements reveal that all the samples have ferromagnetic features and saturation magnetization increases on increasing the dopant concentration. Room-temperature PL spectra show an ultraviolet (UV) emission at 380nm and a green emission at 500nm, whose intensity is greatly increased with increased Cr dopant. Moreover, the results of PL further testify that ferromagnetism (FM) is an intrinsic property of the Cr-doped ZnO films and FM can be described by bound magnetic polaron (BMP) models with respect to defect-bound carriers. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1358 / 1362

页数：5

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