C-V Characteristics of n-channel Double Gate MOS Structures Incorporating the Effect of Interface States

被引：3

作者：

Alam, A. ^{[1
]}

Ahmed, S. ^{[1
]}

Alam, M. K. ^{[1
]}

Khosru, Quazi D. M. ^{[1
]}

机构：

[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

来源：

PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2 | 2008年

关键词：

D O I：

10.1109/ICECE.2008.4769251

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The Capacitance-Voltage (CV) characteristics of n-channel Double Gate (DG) MOS structures are investigated. An accurate and efficient fully coupled I-D Schrodinger-Poisson self-consistent solver has been used. The numerical solver employs finite element method to calculate different electrostatics of n-channel DGMOS structures. The CV characteristics are modeled by taking the effect of interface trapped charges into account for varying densities of interface states. Both high frequency (HF) and low frequency (LF) operations are considered.

引用

页码：456 / 459

页数：4

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