A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications

被引：3

作者：

NguyenNgoc, D ^{[1
]}

Sunderland, DA ^{[1
]}

Ahlgren, DC ^{[1
]}

Jeng, SJ ^{[1
]}

Gilbert, MM ^{[1
]}

Malinowski, JC ^{[1
]}

Schonenberg, KT ^{[1
]}

Stein, KS ^{[1
]}

Meyerson, BS ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1996年 / 102卷

关键词：

D O I：

10.1016/0169-4332(96)00048-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it must offer more than just the HBT: it must have a complete set of passive elements and interconnects suitable for the rf design environment. This paper describes the development and current status of IBM's advanced SiGe HBT technology installed on a 200 mm CMOS/DRAM line. It reviews basic principles of HBT operation. discusses the aspects of the ultra high vacuum chemical vapor deposition (UKV/CVD) growth technique, describes the overall SiGe HBT process, the performance of the HBTs and support devices, and the circuit results achieved to date.

引用

页码：194 / 201

页数：8

共 44 条

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