High performance stretchable UV sensor arrays of SnO2 nanowires

被引：44

作者：

Kim, Daeil ^{[1
]}

Shin, Gunchul ^{[1
]}

Yoon, Jangyeol ^{[1
]}

Jang, Dongseok ^{[1
]}

Lee, Seung-Jung ^{[2
]}

Zi, Goangseup ^{[2
]}

Ha, Jeong Sook ^{[1
,3
]}

机构：

[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[2] Korea Univ, Dept Civil Environm & Architectural Engn, Seoul 136701, South Korea

[3] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 31期

基金：

新加坡国家研究基金会;

关键词：

LIGHT-EMITTING DIODE; PHOTODETECTORS; ELECTRONICS; DEVICES;

D O I：

10.1088/0957-4484/24/31/315502

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO2 nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array. SnO2 NW UV sensors showed an average photosensitivity of similar to 10(5) and a photoconductive gain of similar to 10(6) under very low UV (lambda = 254 nm) power intensities of 0.02-0.04 mW cm(-2). The UV sensing performance was not deteriorated by a prestrain of up to 23% induced by radial deformation, consistent with the mechanical analysis.

引用

页数：8

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