Studies of the effect of proton irradiation on 6H-SiC pn junction properties

被引：7

作者：

Lebedev, AA ^{[1
]}

Strel'chuk, AM

Kozlovski, VV

Savkina, NS

Davydov, DV

Solov'ev, VV

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier 5, France

[3] St Petersburg State Tech Univ, St Petersburg 194251, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

6H-SiC; proton irradiation; lifetimes; deep levels; compensation;

D O I：

10.1016/S0921-5107(98)00553-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of proton irradiation on current-voltage characteristics, N-d-N-a values and parameters of deep centres in GI-I-SIC pn junctions has been studied. The irradiation was carried out with 8-MeV protons with doses from 10(14) to 10(16) cm(-2). Irradiation with a dose of 5.4 x 10(15) cm(-2) resulted in a very high resistance of forward-biased pn structures, remaining high even after anneling to 500 degrees C. It is suggested that proton irradiation reduces the holes lifetime and increases the concentration of deep centers, which leads to formation of an i-layer. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：450 / 453

页数：4

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