Effect of piezoelectric constants in electronic structures of InGaN quantum dots

被引:9
作者
Hong, K. B. [1 ]
Kuo, M. K. [1 ]
机构
[1] Natl Taiwan Univ, Inst Appl Mech, Taipei 10764, Taiwan
关键词
OPTICAL-PROPERTIES;
D O I
10.1088/0268-1242/28/10/105006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study theoretically investigates the effect of the sign of the shear piezoelectric constant on the optical properties of wurtzite InGaN quantum dots (QDs) that are grown on polar, semipolar and nonpolar GaN substrates. The strain fields, electric potentials and single-particle state energies are analyzed using the theory of piezoelectricity and the strained k . p Hamiltonian. Calculations reveal that the sign of e(15) greatly affects the electric potentials and optical properties, especially of larger QDs. The change in electron energy is particularly sensitive to the height of QDs for either sign of e(15). A positive e(15) causes a greater decrease (increase) in electron (hole) energies than a negative e(15). Furthermore, the exciton binding energy of polar QDs is sensitive to dot height, unlike semipolar and nonpolar QDs, which have weak binding energies. The transition energies of InGaN QDs in semipolar or nonpolar substrates are greatly increased. However, the overlap of the electron-hole wavefunctions is clearly greater when the indium content is lower. Based on the results herein, QDs grown on (1 1 0 1) planes should be preferred to those grown on polar and nonpolar planes for optical applications.
引用
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页数:7
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