Aurivillius compound;
impedance spectroscopy;
grain boundary;
electric modulus;
dielectric relaxation;
AC conductivity;
RELAXOR BEHAVIOR;
BISMUTH TITANATE;
DIELECTRIC-RELAXATION;
PHASE-TRANSITION;
BA;
D O I:
10.2298/PAC1403145B
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this work, we report the dielectric, impedance, modulus and conductivity study of BaBi4Ti4O15 ceramic synthesized by solid state reaction. X-ray diffraction (XRD) pattern showed orthorhombic structure with space group A(21)am confirming it to be an m = 4 member of the Aurivillius oxide. The frequency dependence dielectric study shows that the value of dielectric constant is high at lower frequencies and decreases with increase in frequency. Impedance spectroscopy analyses reveal a non-Debye relaxation phenomenon since relaxation frequency moves towards the positive side with increase in temperature. The shift in impedance peaks towards higher frequency side indicates conduction in material and favouring of the long rangemotion of mobile charge carriers. The Nyquist plot from complex impedance spectrum shows only one semicircular arc representing the grain effect in the electrical conduction. The modulus mechanism indicates the non-Debye type of conductivity relaxation in the material, which is supported by impedance data. Relaxation times extracted using imaginary part of complex impedance (Z '') and modulus (M '') were also found to follow Arrhenius law. The frequency dependent AC conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of DC conductivity exhibits a negative temperature coefficient of resistance behaviour.