Effect of doping and low-temperature annealing on generation of microdefects in Czochralski-grown silicon single crystals studied by X-ray diffuse scattering

X-ray diffuse scattering by microdefects in germanium-doped silicon single crystals has been studied prior to and upon prolonged low-temperature annealing on a triple-crystal X-ray diffractometer. It is shown that in undoped silicon samples not subjected to thermal annealing, microdefects have the minimum concentration, which increases with an increase of the concentration of Ge-dopant. It is established that doping of Si single crystals having a low dislocation density (N-d less than or equal to 10(4) cm(-2)) with germanium accelerates the formation of associations of point defects.