Graphene-like Si3N3 and Si3N4 Nanolayers on Silicon Surface

被引：0

作者：

Razumets, Alena ^{[1
]}

Lebiadok, Yahor ^{[1
]}

Rzheutski, Mikalai ^{[2
]}

机构：

[1] SSPA Opt Optoelect & Laser Technol, 68 Niezalieznsci, Minsk, BELARUS

[2] BI Stepanov Inst Phys, 68-2 Niezalieznsci, Minsk, BELARUS

来源：

2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING) | 2019年

关键词：

ELECTRONIC-STRUCTURE; NITRIDE;

D O I：

10.1109/piers-spring46901.2019.9017690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stability of the g-Si3N3 and g-Si3N4 layers, as well as the stability of these layers on the silicon (111) surface, are discusses in this paper. The density functional theory calculations with the hybrid functionals B3LYP with Hay-Wadt effective core potentials for all the heavy atoms in a combination with Hay-Wadt valence basis were used. This article presents the results of geometric optimization for graphene-like layers of silicon nitride.

引用

页码：2659 / 2662

页数：4

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