From 2-Dimensional Lithography To 3-Dimensional Structures

被引：1

作者：

van Zeijl, H. W. ^{[1
]}

Wei, J. ^{[1
]}

Shen, C. ^{[1
]}

Verhaar, T. M. ^{[1
]}

Maury, P. ^{[2
]}

Sarro, P. M. ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, Delft, Netherlands

[2] ASML, NL-5504 Delft, Netherlands

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期

关键词：

D O I：

10.1149/1.3360654

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Lithography for IC device fabrication is a high volume high accuracy production technology. Such production characteristics are also attractive for MEMS and 3 dimensional (3D) integration processes. However, advanced lithography has a strong 2 dimensional (2D) nature and is not optimized to fabricate 3D structures. In this work, 5 exposure and etch strategies are discussed to use advanced 2D lithography to fabricate 3D structures.

引用

页码：421 / 426

页数：6

共 16 条

[1]

[Anonymous], ASML PRODUCT CATALOG

[2] Case Study of a 65-nm SoC Design [J].