Interaction of 6H-type Stacking Faults with Threading Screw Dislocations in PVT-grown 4H-SiC Single Crystals

被引：0

作者：

Sato, S. ^{[1
]}

Fujimoto, T. ^{[1
]}

Tsuge, H. ^{[1
]}

Katsuno, M. ^{[1
]}

Ohashi, W. ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Futtsu, Chiba 2938511, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

silicon carbide; 4H-SiC; PVT growth; stacking fault; threading screw dislocation; LAYERS;

D O I：

10.4028/www.scientific.net/MSF.717-720.411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-type stacking faults (SFs) observed in PVT-grown 4H-SiC single crystals were investigated using Photoluminescence (PL) microscopy at room temperature. Structural analyses using high resolution X-ray topography have revealed that there exist no < 000n > (n=4, 8) component in Burger's vectors of the 6H-type SFs we observed, strongly suggesting that the 6H-type SFs arc constructed either by insertions of very thin 6H-type foreign polytype inclusions or by successive repetitions of Shockley-type in-plane glides.

引用

页码：411 / 414

页数：4

共 10 条

[1] Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping [J].

Feng, Gan ;

Suda, Jun ;

Kimoto, Tsunenobu .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[2] Time sequential evolutions of optically-induced single Shockley stacking faults formed in 4H-SiC epitaxial layers [J].

Fujimoto, T. ;

Aigo, T. ;

Nakabayashi, M. ;

Sato, S. ;

Katsuno, M. ;

Tsuge, H. ;

Yashiro, H. ;

Hirano, H. ;

Hoshino, T. ;

Ohashi, W. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :319-322

[3] Growth and characterization of large-diameter 4H-SiC crystals with high crystal quality [J].

Nakabayashi, M. ;

Fujimoto, T. ;

Katsuno, M. ;

Tsuge, H. ;

Aigo, T. ;

Satoh, S. ;

Yashiro, H. ;

Hoshino, T. ;

Hirano, H. ;

Ohashi, W. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :9-12

[4] Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density [J].

Nakamura, Daisuke ;

Yamaguchi, Satoshi ;

Gunjishima, Itaru ;

Hirose, Yoshiharu ;

Kimoto, Tsunenobu .

JOURNAL OF CRYSTAL GROWTH, 2007, 304 (01) :57-63

[5] Dislocation processes during SiC bulk crystal growth [J].

Ohtani, N ;

Katsuno, M ;

Tsuge, H ;

Fujimoto, T ;

Nakabayashi, M ;

Yashiro, H ;

Sawamura, M ;

Aigo, T ;

Hoshino, T .

MICROELECTRONIC ENGINEERING, 2006, 83 (01) :142-145

[6] Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals [J].

Ohtani, N ;

Katsuno, M ;

Tsuge, H ;

Fujimoto, T ;

Nakabayashi, M ;

Yashiro, H ;

Sawamura, M ;

Aigo, T ;

Hoshino, T .

JOURNAL OF CRYSTAL GROWTH, 2006, 286 (01) :55-60

[7] Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport [J].

Ohtani, Noboru ;

Katsuno, Masakazu ;

Nakabayashi, Masashi ;

Fujimoto, Tatsuo ;

Tsuge, Hiroshi ;

Yashiro, Hirokatsu ;

Aigo, Takashi ;

Hirano, Hosei ;

Hoshino, Taizo ;

Tatsumi, Kohei .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) :1475-1481

[8] 6H-type zigzag faults in low-doped 4H-SiC expitaxial layers [J].

Robert, T. ;

Marinova, M. ;

Juillaguet, S. ;

Henry, A. ;

Polychroniadis, E. K. ;

Camassel, J. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :347-+

[9] Growth induced stacking fault formation in 4H-SiC [J].

Siche, D. ;

Albrecht, M. ;

Rost, H. -J. ;

Sendzik, A. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :21-+

[10] Sublimation growth of 6H- and 4H-SiC single crystals in the [1(1)over-bar-00] and [11(2)over-bar-0] directions [J].

Takahashi, J ;

Ohtani, N ;

Katsuno, M ;

Shinoyama, S .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) :229-240

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