Thermal transport across few-layer boron nitride encased by silica

被引:25
作者
Ni, Yuxiang [1 ]
Jiang, Jiechao [2 ]
Meletis, Efstathios [2 ]
Dumitrica, Traian [1 ]
机构
[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
[2] Univ Texas Arlington, Dept Mat Sci & Engn, Arlington, TX 76019 USA
基金
美国国家科学基金会;
关键词
CONDUCTIVITY; FIELD;
D O I
10.1063/1.4927240
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO2). We report large interfacial thermal resistances, of about 2.2 x 10(-8) m(2) K W-1, which are not sensitive to the number of h-BN layers or the SiO2 crystallinity. The h-BN/SiO2 superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 42 条
[1]   Modelling of boron nitride: Atomic scale simulations on thin film growth [J].
Albe, K ;
Moller, W .
COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) :111-115
[2]  
[Anonymous], PHYS REV B
[3]  
[Anonymous], NANOSCALE ENERGY TRA
[4]   Equilibrium molecular dynamics determination of thermal conductivity for multi-component systems [J].
Babaei, Hasan ;
Keblinski, Pawel ;
Khodadadi, Jay M. .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)
[5]  
Baldus H.-P., 1997, Angewandte Chemie (International Edition in English), V36, P328, DOI 10.1002/anie.199703281
[6]  
Bray Charles., 2001, Dictionary of glass: materials and techniques
[7]   Nanoscale thermal transport. II. 2003-2012 [J].
Cahill, David G. ;
Braun, Paul V. ;
Chen, Gang ;
Clarke, David R. ;
Fan, Shanhui ;
Goodson, Kenneth E. ;
Keblinski, Pawel ;
King, William P. ;
Mahan, Gerald D. ;
Majumdar, Arun ;
Maris, Humphrey J. ;
Phillpot, Simon R. ;
Pop, Eric ;
Shi, Li .
APPLIED PHYSICS REVIEWS, 2014, 1 (01)
[8]   Thermal contact resistance between graphene and silicon dioxide [J].
Chen, Z. ;
Jang, W. ;
Bao, W. ;
Lau, C. N. ;
Dames, C. .
APPLIED PHYSICS LETTERS, 2009, 95 (16)
[9]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[10]   Emergence of ferroelectricity and spin-valley properties in two-dimensional honeycomb binary compounds [J].
Di Sante, Domenico ;
Stroppa, Alessandro ;
Barone, Paolo ;
Whangbo, Myung-Hwan ;
Picozzi, Silvia .
PHYSICAL REVIEW B, 2015, 91 (16)