Two-dimensional excitons in three-dimensional hexagonal boron nitride

被引:77
作者
Cao, X. K. [1 ]
Clubine, B. [2 ]
Edgar, J. H. [2 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
[2] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA
关键词
CHEMICAL-VAPOR-DEPOSITION; ATMOSPHERIC-PRESSURE; SINGLE-CRYSTALS; GRAPHENE; HETEROSTRUCTURES; EMISSION; SOLVENT;
D O I
10.1063/1.4829026
中图分类号
O59 [应用物理学];
学科分类号
摘要
The recombination processes of excitons in hexagonal boron nitride (hBN) have been probed using time-resolved photoluminescence. It was found that the theory for two-dimensional (2D) exciton recombination describes well the exciton dynamics in three-dimensional hBN. The exciton Bohr radius and binding energy deduced from the temperature dependent exciton recombination lifetime is around 8 angstrom and 740 meV, respectively. The effective masses of electrons and holes in 2D hBN deduced from the generalized relativistic dispersion relation of 2D systems are 0.54m(o), which are remarkably consistent with the exciton reduced mass deduced from the experimental data. Our results illustrate that hBN represents an ideal platform to study the 2D optical properties as well as the relativistic properties of particles in a condensed matter system. (c) 2013 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] Discrete color centers in two-dimensional hexagonal boron nitride induced by fast neutron irradiation
    Zhang, Hui
    Lan, Mu
    Tang, Ge
    Chen, Feiliang
    Shu, Zhiwen
    Chen, Fengxiang
    Li, Mo
    JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (39) : 12211 - 12216
  • [32] Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence
    Du, X. Z.
    Fyre, C. D.
    Edgar, J. H.
    Lin, J. Y.
    Jiang, H. X.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (05)
  • [33] Two-dimensional hexagonal boron-carbon-nitrogen atomic layers
    Cheng, Likun
    Meng, Junhua
    Pan, Xiaojun
    Lu, Yong
    Zhang, Xingwang
    Gao, Menglei
    Yin, Zhigang
    Wang, Denggui
    Wang, Ye
    You, Jingbi
    Zhang, Jicai
    Xie, Erqing
    NANOSCALE, 2019, 11 (21) : 10454 - 10462
  • [34] Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate
    Yang, Xu
    Pristovsek, Markus
    Nitta, Shugo
    Liu, Yuhuai
    Honda, Yoshio
    Koide, Yasuo
    Kawarada, Hiroshi
    Amano, Hiroshi
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (41) : 46466 - 46475
  • [35] Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
    Liu, Yuanyue
    Zou, Xiaolong
    Yakobson, Boris I.
    ACS NANO, 2012, 6 (08) : 7053 - 7058
  • [36] A first-principles study on three-dimensional covalently-bonded hexagonal boron nitride nanoribbons
    Lee, Sang-Hoon
    Jhi, Seung-Hoon
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (07)
  • [37] Exploring the structure-property relationship of three-dimensional hexagonal boron nitride aerogels with gyroid surfaces
    Chen, Yan
    Qin, Huasong
    Song, Juzheng
    Liu, Zeming
    Liu, Yilun
    Pei, Qing-Xiang
    NANOSCALE, 2020, 12 (18) : 10180 - 10188
  • [38] Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond
    Vandenberghe, William G.
    Osanloo, Mehrdad Rostami
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (02) : 623 - 631
  • [39] Sensitive single-photon test of extended quantum theory with two-dimensional hexagonal boron nitride
    Vogl, Tobias
    Knopf, Heiko
    Weissflog, Maximilian
    Lam, Ping Koy
    Eilenberger, Falk
    PHYSICAL REVIEW RESEARCH, 2021, 3 (01):
  • [40] The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
    Knobloch, Theresia
    Illarionov, Yury Yu.
    Ducry, Fabian
    Schleich, Christian
    Wachter, Stefan
    Watanabe, Kenji
    Taniguchi, Takashi
    Mueller, Thomas
    Waltl, Michael
    Lanza, Mario
    Vexler, Mikhail I.
    Luisier, Mathieu
    Grasser, Tibor
    NATURE ELECTRONICS, 2021, 4 (02) : 98 - 108