Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon

The dependence of the gate oxide integrity on the grown-in defect density is demonstrated using Czochralski grown crystals with different as grown defect densities and by varying the gate oxide thickness in the range of 5-25 nm. The Poisson distribution -ln(1-F)=rho(A)A(gate) (F: ratio of failures, rho(A): area defect density, A(gate): gate area) is modified to -ln(1-F)=0.45 rho(B)t(ox)A(gate) to be able to involve the bulk defect density rho(B) and the thickness of the gate oxide t(ox). The good agreement of that model with experimental data is proved comparing the density of infrared light scattering tomography defects and flow pattern defects with the gate oxide integrity yield.