Investigation of the temperature dependence in Black's equation using microscopic electromigration modeling

被引:12
作者
Tammaro, M [1 ]
机构
[1] Univ Rhode Isl, Dept Phys, Kingston, RI 02881 USA
关键词
D O I
10.1063/1.371268
中图分类号
O59 [应用物理学];
学科分类号
摘要
The long-standing speculation regarding an additional temperature dependence in Black's equation is addressed. Under the premise that the activation energy measured using Black's equation, E-a, should be equal to the energy barrier for atomic hopping, we provide evidence for an additional T-2 dependence of the failure time. Microscopic modeling provides an explicit connection between the macroscopic model behavior and the microscopic parameters of the model. These results may provide a reliable method for measuring activation energies for self-diffusion in pure metals. (C) 1999 American Institute of Physics. [S0021- 8979(99)03019-4].
引用
收藏
页码:3612 / 3615
页数:4
相关论文
共 12 条
[1]  
Black J.R., 1967, IEEE 6 ANN REL PHYS, P148
[2]   VACANCY SUPERSATURATION MODEL FOR ELECTROMIGRATION FAILURE UNDER DC AND PULSED DC STRESS [J].
CLEMENT, JJ .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4264-4268
[3]   Reliability analysis for encapsulated interconnect lines under dc and pulsed dc current using a continuum electromigration transport model [J].
Clement, JJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :5991-6000
[4]  
GHEZ R, 1988, PRIMER DIFFUSION PRO, P83
[5]   ELECTROMIGRATION IN METALS [J].
HO, PS ;
KWOK, T .
REPORTS ON PROGRESS IN PHYSICS, 1989, 52 (03) :301-348
[6]   ELECTROMIGRATION FAILURE MECHANISMS IN BAMBOO-GRAINED AL(CU) INTERCONNECTIONS [J].
HU, CK .
THIN SOLID FILMS, 1995, 260 (01) :124-134
[7]   ELECTROMIGRATION IN AL(CU) 2-LEVEL STRUCTURES - EFFECT OF CU AND KINETICS OF DAMAGE FORMATION [J].
HU, CK ;
SMALL, MB ;
HO, PS .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :969-978
[8]   ON VOID NUCLEATION AND GROWTH IN METAL INTERCONNECT LINES UNDER ELECTROMIGRATION CONDITIONS [J].
NIX, WD ;
ARZT, E .
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1992, 23 (07) :2007-2013
[9]  
SHATZKES M, 1986, J APPL PHYS, V59, P3891
[10]   Electromigration damage and failure distributions in Al-4 wt % Cu interconnects [J].
Shih, WC ;
Greer, AL .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2551-2557