Impact of Oxygen Vacancy on Energy-Level Alignment at MoOx/Organic Interfaces

被引：39
作者：
Zhang, Zheng [1 ]
Xiao, Yan [1 ]
Wei, Huai-Xin [1 ]
Ma, Guo-Fu [1 ]
Duhm, Steffen [1 ]
Li, Yan-Qing [1 ]
Tang, Jian-Xin [1 ]
机构：
[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 09期
关键词：
LIGHT-EMITTING-DIODES; TRANSITION-METAL OXIDES; ORGANIC SOLAR-CELLS; LAYER; MOO3; DEFECTS;
D O I：
10.7567/APEX.6.095701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxygen vacancies in MoOx play an essential role in interface energetics for charge injection and transport in organic devices. The influence of oxygen vacancy on energy-level alignment at the interface between MoOx and organic hole-transport layers is studied via photoemission spectroscopy. The degree of oxygen vacancies in MoOx is controlled by thermal annealing, which results in the partial reduction of Mo cations and a decrease in their work function. The hole-injection barrier at MoOx/organic interfaces increases as a consequence of the increase in oxygen deficiency. (c) 2013 The Japan Society of Applied Physics
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页数：4
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