Impact of Oxygen Vacancy on Energy-Level Alignment at MoOx/Organic Interfaces

被引：39

作者：

Zhang, Zheng ^{[1
]}

Xiao, Yan ^{[1
]}

Wei, Huai-Xin ^{[1
]}

Ma, Guo-Fu ^{[1
]}

Duhm, Steffen ^{[1
]}

Li, Yan-Qing ^{[1
]}

Tang, Jian-Xin ^{[1
]}

机构：

[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 09期

关键词：

LIGHT-EMITTING-DIODES; TRANSITION-METAL OXIDES; ORGANIC SOLAR-CELLS; LAYER; MOO3; DEFECTS;

D O I：

10.7567/APEX.6.095701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen vacancies in MoOx play an essential role in interface energetics for charge injection and transport in organic devices. The influence of oxygen vacancy on energy-level alignment at the interface between MoOx and organic hole-transport layers is studied via photoemission spectroscopy. The degree of oxygen vacancies in MoOx is controlled by thermal annealing, which results in the partial reduction of Mo cations and a decrease in their work function. The hole-injection barrier at MoOx/organic interfaces increases as a consequence of the increase in oxygen deficiency. (c) 2013 The Japan Society of Applied Physics

引用

页数：4

共 39 条

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