Current density enhancement nano-contact phase-change memory for low writing current

被引：6

作者：

Yin, You ^{[1
]}

Hosaka, Sumio ^{[1
]}

Park, Woon Ik ^{[2
]}

Jung, Yeon Sik ^{[2
]}

Lee, Keon Jae ^{[2
]}

You, Byoung Kuk ^{[2
]}

Liu, Yang ^{[3
]}

Yu, Qi ^{[3
]}

机构：

[1] Gunma Univ, Fac Sci & Technol, Div Elect & Informat, Kiryu, Gunma 3768515, Japan

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Cells, Chengdu 610051, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

RANDOM-ACCESS MEMORY; NANOSTRUCTURES;

D O I：

10.1063/1.4816080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, a phase-change memory (PCM) with self-assembled nanostructures and an oxidized thin phase-change layer is proposed and intensively investigated for low writing reset current by finite element analysis. Current density is significantly enhanced in our nano-contact memory because of the existence of nanostructures and oxidized phase-change layer. The writing current of our proposed memory is about 1/10-3/10 that of conventional cell, which is in good agreement with our experimental results. The heat efficiency in the nano-contact PCM cell is greatly improved and its power consumption can be as low as about 1/10 that of the conventional cell. (C) 2013 AIP Publishing LLC.

引用

页数：5

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