Direct observation of intermixing at Ge/Si(001) interfaces by high-resolution Rutherford backscattering spectroscopy

被引：56

作者：

Nakajima, K ^{[1
]}

Konishi, A ^{[1
]}

Kimura, K ^{[1
]}

机构：

[1] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.83.1802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The initial stage of Ge/Si(001) epitaxial growth is studied with high-resolution Rutherford backscattering spectroscopy. In contrast to the generally accepted picture, intermixing of Ge and Si begins before the first layer is completed at the growth temperature of 500 degrees C. If the layer is deposited at room temperature, intermixing takes place during annealing at 300-800 degrees C. These observations are in reasonable agreement with a recent theoretical study based on generalized gradient approximation density functional calculations [Y. Yoshimoto and M. Tsukada, Surf. Sci. 423, 32 (1999)].

引用

页码：1802 / 1805

页数：4

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