High performance inverted bulk heterojunction solar cells by incorporation of dense, thin ZnO layers made using atmospheric atomic layer deposition

被引：34

作者：

Hoye, Robert L. Z. ^{[1
]}

Munoz-Rojas, David ^{[1
]}

Iza, Diana C. ^{[1
]}

Musselman, Kevin P. ^{[1
,2
]}

MacManus-Driscoll, Judith L. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Dept Phys, Cambridge CB3 0H3, England

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 116卷

基金：

英国工程与自然科学研究理事会;

关键词：

Spatial or atmospheric atomic layer deposition; Organic photovoltaics; Nanoscale; Hole blocking layer; GLASS-TRANSITION TEMPERATURE;

D O I：

10.1016/j.solmat.2013.04.020

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A thin ZnO (<200 nm) film grown by Atmospheric Atomic Layer Deposition (AALD) in a matter of minutes was studied as a hole-blocking layer in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-buyric acid methyl ester (P3HT:PCBM) based inverted solar cells. These AALD ZnO layers were compact, had a high electron mobility of 3.4 +/- 0.1 cm(2)/Vs, had up to 100% transmittance to visible light, and a good wettability for the blend. Despite the very rapid, open atmosphere growth method, the cell performance was comparable with some of the best inverted bulk heterojunction P3HT:PCBM cells in the literature. The performance was also maintained after 200 days of storage in air in the dark. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.

引用

页码：197 / 202

页数：6

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