Extended defects and precipitation in heavily B-doped silicon

被引：13
作者：
Cojocaru-Miredin, O. [1 ,2 ]
Cristiano, F. [3 ,4 ]
Fazzini, P. -F. [5 ,6 ]
Mangelinck, D. [7 ,8 ]
Blavette, D. [1 ]
机构：
[1] Univ Rouen, GPM, UMR CNRS 6634, St Etienne De Rouvray, France
[2] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
[3] CNRS, LAAS, F-31400 Toulouse, France
[4] Univ Toulouse, LAAS, F-31400 Toulouse, France
[5] LPCNO INSA, Toulouse, France
[6] Univ Toulouse, UPS, INPT, LCC, Toulouse, France
[7] Aix Marseille Univ, IM2NP Case 142, Fac St Jerome, F-13397 Marseille 20, France
[8] CNRS, IM2NP UMR 7334, F-13397 Marseille 20, France
来源：
THIN SOLID FILMS | 2013年 / 534卷
关键词：
Microelectronics; Extended defects; Precipitation; Implanted silicon; Boron; Atom probe tomography; Transmission electron microscopy; BORON-INTERSTITIAL CLUSTERS; DISSOLUTION; SI;
D O I：
10.1016/j.tsf.2013.01.090
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The boron precipitation phenomenon in highly supersaturated boron-implanted silicon (10 keV B+, 5 x 10(15) ions/cm(2)) has been investigated by means of atom probe tomography, transmission electron microscopy and secondary ion mass spectrometry. We demonstrate that (001) dislocation loops observed by transmission electron microscopy in the region close to the boron projected range and boron precipitates ((001)-platelets) observed by atom probe are the same objects. For sufficiently high thermal budgets (900 degrees C for 5 h), boron precipitates close to the stoichiometric SiB3 composition have been observed, indicating that the precipitation induced by high-dose boron implantation can lead to the formation of a stable phase. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：62 / 66
页数：5
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