Generation of nanoparticles at a fluence less than the ablation threshold using femtosecond laser pulses

被引:6
作者
Odachi, Go [1 ]
Sakamoto, Ryosuke [1 ]
Hara, Kento [1 ]
Yagi, Takashi [1 ]
机构
[1] Tokai Univ, Dept Phys, Hiratsuka, Kanagawa 25912, Japan
关键词
Femtosecond laser; Micromachining; Debris; Silicon; Nanoparticle; Solid state crystallization; Non-thermal phase transition; AMORPHOUS-SILICON; EXCIMER-LASER; FILMS; DAMAGE; SI;
D O I
10.1016/j.apsusc.2013.06.025
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Femtosecond laser machining of crystalline Si in vacuum resulted in the formation of pillars and particles of similar to 100 nm in size at the wall surfaces and the periphery of the ablated hole. These structures were created at a laser fluence below the ablation threshold. The nanopillars and nanoparticles appear to grow from the target surface. The target surface near the particles showed molten features with descending height, indicating significant mass transport from the surface layer to the particles. The nanopillars and nanoparticles likely formed as a result of successive crystal growth processes including amorphization of the laser-irradiated target surface, followed by crystalline nucleation, melting of the amorphous Si surrounding the crystalline particles, and liquid Si creeping over particle surfaces leading to an increase in particle size. By repeating these processes, the particles grow in cumulative laser shots. These particles are the major debris components distributed near micron-sized holes formed at the ablation threshold fluence in vacuum. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:638 / 641
页数:4
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