Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

被引:73
|
作者
Demirezen, S. [1 ]
Kaya, A. [2 ]
Yeriskin, S. A. [3 ]
Balbasi, M. [3 ]
Uslu, I. [4 ]
机构
[1] Amasya Univ, Vocat Sch Design, Dept Comp Aided Design & Animat, Amasya, Turkey
[2] Turgut Ozal Univ, Vocat Sch Med Sci, Dept Opticianry, Ankara, Turkey
[3] Gazi Univ, Fac Engn, Dept Chem Engn, Ankara, Turkey
[4] Gazi Univ, Fac Sci & Arts, Dept Chem, Ankara, Turkey
关键词
Thin films; Electrical properties; Interface/interphase; SCHOTTKY-BARRIER DIODES; DIFFUSION BARRIER; ROOM-TEMPERATURE; SPECTROSCOPY; RELAXATION; INTERFACE;
D O I
10.1016/j.rinp.2016.03.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of epsilon', epsilon', tan delta, electric modulus (M' and M '') and sigma(ac) of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of epsilon', epsilon', tand, M', M '' and sigma(ac) of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of epsilon', epsilon '' and tand show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of sigma(ac) and the electric modulus increase with increasing frequency. The high dispersion in epsilon' and epsilon '' values at low frequencies may be attributed to the Maxwell-Wagner and space charge polarization. The high values of epsilon' may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M ' and M '' reach a maximum constant value corresponding to M-infinity approximate to 1/epsilon(infinity) due to the relaxation process at high frequencies, but both the values of M ' and M '' approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of N-ss and R-s of the capacitors. As a result, the change in the epsilon', epsilon '', tan delta, M', M '' and ac electric conductivity (sigma(ac)) is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. (C) 2016 The Authors. Published by Elsevier B.V.
引用
收藏
页码:180 / 185
页数:6
相关论文
共 50 条
  • [21] A study of frequency dependent electrical and dielectric properties of NiO nanoparticles
    Usha, V.
    Kalyanaraman, S.
    Vettumperumal, R.
    Thangavel, R.
    PHYSICA B-CONDENSED MATTER, 2017, 504 : 63 - 68
  • [22] Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures
    Gowtham, B.
    Balasubramani, V
    Ramanathan, S.
    Ubaidullah, Mohd
    Shaikh, Shoyebmohamad F.
    Sreedevi, Gedi
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 888 (888)
  • [23] Formulation of conductivity, electric modulus and dielectric behaviour of calcium bismuth borovanadate glasses with varying temperature and frequency
    Rani, Asha
    Parmar, Rajesh
    Kundu, R. S.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2024, 631
  • [24] Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage
    Yucedag, Ibrahim
    Ersoz, Gulcin
    Gumus, Ahmet
    Altindal, Semsettin
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2015, 29 (13):
  • [25] AC-electrical conductivity, magnetic susceptibility, dielectric modulus and impedance studies of sol-gel processed nano-NiMgZn ferrites
    Sagar, T. Vidya
    Rao, T. Subba
    Naidu, K. Chandra Babu
    MATERIALS CHEMISTRY AND PHYSICS, 2021, 258
  • [26] Temperature and frequency dependence of AC electrical conductivity, dielectric permittivities, modulus and impedance parts for thermally deposited Se80S20 thin film
    Elsaeedy, H. I.
    Qasem, Ammar
    Mahmoud, Mona
    Yakout, H. A.
    Abdelaal, Said A.
    OPTICAL MATERIALS, 2021, 111
  • [27] Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage
    Demirezen, Selcuk
    Eroglu, Aysegul
    Azizian-Kalandaragh, Yashar
    Altindal, Semsettin
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (18) : 15589 - 15598
  • [28] Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature
    Alptekin, S.
    Tataroglu, A.
    Altinda, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (07) : 6853 - 6859
  • [29] Temperature-dependent AC conductivity and dielectric and impedance properties of ternary In-Te-Se nanocomposite thin films
    Mannu, Pandian
    Palanisamy, Matheswaran
    Bangaru, Gokul
    Ramakrishnan, Sathyamoorthy
    Kandasami, Asokan
    Kumar, Pawan
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (07):
  • [30] Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature
    Demirezen, Selcuk
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 112 (04): : 827 - 833