Construction of high-quality p-type ZnSe nanowires/n-type Si heterojunctions and their nano-optoelectronic applications

被引：0
|
作者：
Lu, Min [1 ]
Zhao, Xingzhi [1 ]
Wang, Xiangan [1 ]
Ren, Yongbin [1 ]
Wang, Li [1 ]
机构：
[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
来源：
ADVANCED MATERIALS DESIGN AND MECHANICS | 2012年 / 569卷
关键词：
p-type ZnSe nanowires; Heterojunction; Photodetector; Photovoltaic;
D O I：
10.4028/www.scientific.net/AMR.569.31
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/n-type Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (<0.1s) and a high I-light/I-dark ratio (>10(3)). And the photovoltaic characteristics of it exhibit a fill factor of about 24% and a high power conversion efficiency of 0.89%.
引用
收藏
页码：31 / 34
页数：4
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