Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

被引：21

作者：

Chen, Ying-Chen ^{[1
]}

Lin, Chih-Yang ^{[2
]}

Huang, Hui-Chun ^{[2
]}

Kim, Sungjun ^{[3
]}

Fowler, Burt ^{[1
]}

Chang, Yao-Feng ^{[1
]}

Wu, Xiaohan ^{[1
]}

Xu, Gaobo ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 05期

关键词：

selector-less; resistive switching; silicon dioxide; nonlinear; TEMPERATURE-DEPENDENCE; OXIDE; RRAM; CONDUCTION; MECHANISM; RESET;

D O I：

10.1088/1361-6463/aaa1b9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of similar to 1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

引用

页数：8

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