Electron dynamics in transparent materials under high-intensity laser irradiation

被引:9
作者
Brenk, Oliver [1 ]
Rethfeld, Baerbel
机构
[1] Tech Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
关键词
femtosecond laser absorption; distribution function; collision integrals; Boltzmann kinetic approach; multiple rate equation; dielectrics; laser damage threshold; theory; INDUCED BREAKDOWN; FEMTOSECOND; DIELECTRICS; NANOSECOND; DAMAGE; PICOSECOND; ABLATION; PULSES;
D O I
10.1117/1.OE.51.12.121810
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The energy of a laser beam irradiating a surface is primarily absorbed by electrons within the solid. In actual transparent materials, absorption is low. High-intensity lasers may, however, be absorbed by initially bounded electrons through nonlinear processes. The increase of free-electron density leads eventually to dielectric breakdown, and the material becomes highly absorbing. We present theoretical studies on the dynamics of electrons in dielectrics under irradiation with a visible high-intensity laser pulse. We consider microscopic processes determining absorption, redistribution of the energy among electrons, and transfer of energy to the crystal lattice. We review different aspects of electronic excitation, studied with time-resolved models as the Boltzmann kinetic approach and the time and spatial resolved multiple rate equation. Furthermore, we investigate criteria for damage thresholds. Two concepts are compared, namely a critical free-electron density and the melting threshold of the lattice. We show that in dielectrics both criteria are fulfilled simultaneously. Optical parameters depend on the density of free electrons in the conduction band of the solid, so the free-electron density directly leads to an increased energy absorption causing material modification. We present results on the spatial dependence of dielectric breakdown. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.OE.51.12.121810]
引用
收藏
页数:7
相关论文
共 30 条
[1]  
Anisimov S. I., 1974, SOV PHYS JETP, V39, P375, DOI DOI 10.1016/J.JMATPROTEC.2009.05.031
[2]  
Bauerle D., 2013, Laser Processing and Chemistry
[3]  
Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637
[4]   Modeling ultrashort-pulse laser ablation of dielectric materials [J].
Christensen, B. H. ;
Balling, P. .
PHYSICAL REVIEW B, 2009, 79 (15)
[5]  
Einstein A, 1917, PHYS Z, V18, P121
[6]   Material processing of dielectrics with temporally asymmetric shaped femtosecond laser pulses on the nanometer scale [J].
Englert, L. ;
Wollenhaupt, M. ;
Haag, L. ;
Sarpe-Tudoran, C. ;
Rethfeld, B. ;
Baumert, T. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 92 (04) :749-753
[7]   Control of ionization processes in high band gap materials via tailored femtosecond pulses [J].
Englert, L. ;
Rethfeld, B. ;
Haag, L. ;
Wollenhaupt, M. ;
Sarpe-Tudoran, C. ;
Baumert, T. .
OPTICS EXPRESS, 2007, 15 (26) :17855-17862
[8]   Femtosecond laser ablation of transparent dielectrics:: measurement and modelisation of crater profiles [J].
Guizard, S ;
Semerok, A ;
Gaudin, J ;
Hashida, A ;
Martin, P ;
Quéré, F .
APPLIED SURFACE SCIENCE, 2002, 186 (1-4) :364-368
[9]  
JONES SC, 1989, OPT ENG, V28, P1039, DOI 10.1117/12.7977089
[10]   Microscopic processes in dielectrics under irradiation by subpicosecond laser pulses [J].
Kaiser, A ;
Rethfeld, B ;
Vicanek, M ;
Simon, G .
PHYSICAL REVIEW B, 2000, 61 (17) :11437-11450