Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films

被引：1
|
作者：
Fonthal, F. [1 ]
Goyes, C. [1 ]
Rodriguez, A. [2 ]
机构：
[1] Univ Autonoma Occidente, Adv Mat Micro & Nanotechnol Grp, Calle 25 115-85,Km 2 Via Cali Jamundi, Cali, Colombia
[2] Univ Politecn Cataluna, Dept Elect Engn, Micro & Nanotechnol Grp, Barcelona 08074, Spain
来源：
CERMA 2008: ELECTRONICS, ROBOTICS AND AUTOMOTIVE MECHANICS CONFERENCE, PROCEEDINGS | 2008年
关键词：
Porous Silicon; Electrochemical etching; Electrical conductivity; Electrical equivalent circuit; Metal-semiconductor-metal structure;
D O I：
10.1109/CERMA.2008.62
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to obtain electronic devices based on PS,p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) 100 substrates. The beginning is obtaining good electrical contacts on porous layer, for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.
引用
收藏
页码：3 / +
页数：3
相关论文
共 50 条
  • [41] AC electrical properties of nanocrystalline silicon thin films
    Wang, K
    Chen, H
    Shen, WZ
    PHYSICA B-CONDENSED MATTER, 2003, 336 (3-4) : 369 - 378
  • [42] AC ELECTRICAL BREAKDOWN IN THIN SILICON OXIDE FILMS
    KLEIN, N
    LEVANON, N
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3721 - +
  • [43] Electrical behavior of silicon nitride sputtered thin films
    Vila, M
    Prieto, C
    Ramírez, R
    THIN SOLID FILMS, 2004, 459 (1-2) : 195 - 199
  • [44] Electrical features of the metal-thin porous silicon-silicon structure
    Vikulov, VA
    Strikha, VI
    Skryshevsky, VA
    Kilchitskaya, SS
    Souteyrand, E
    Martin, JR
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (16) : 1957 - 1964
  • [45] Polycrystalline Erbium Phthalocyanine Thin Films Deposited on Silicon and Porous Silicon by Ultrasonic Spray Pyrolysis: Optical, Morphological, and Electrical Characterizations
    D. H. Cuate-Gomez
    A. Garzon-Roman
    J. L. Sosa-Sánchez
    C. Zuñiga-Islas
    Miguel A. Dominguez
    Journal of Electronic Materials, 2021, 50 : 6951 - 6963
  • [46] Polycrystalline Erbium Phthalocyanine Thin Films Deposited on Silicon and Porous Silicon by Ultrasonic Spray Pyrolysis: Optical, Morphological, and Electrical Characterizations
    Cuate-Gomez, D. H.
    Garzon-Roman, A.
    Sosa-Sanchez, J. L.
    Zuniga-Islas, C.
    Dominguez, Miguel A.
    JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (12) : 6951 - 6963
  • [47] Coupled confinement effect on the photoluminescence and electrical transport in porous silicon
    Ciurea, ML
    Draghici, M
    Iancu, V
    Reshotko, M
    Balberg, I
    JOURNAL OF LUMINESCENCE, 2003, 102 : 492 - 497
  • [48] Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer
    Balagurov, LA
    Bayliss, SC
    Orlov, AF
    Petrova, EA
    Unal, B
    Yarkin, DG
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 4184 - 4190
  • [49] Preparation and electrical transport properties of TiO thin films
    Cai, Wen-Bo
    Yang, Yang
    Li, Zhi-Qing
    ACTA PHYSICA SINICA, 2023, 72 (22)
  • [50] Electrical transport in epitaxial and polycrystalline thin LSMO films
    Strbik, V.
    Blagoev, B.
    Mateev, E.
    Nurgaliev, T.
    18TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES (VEIT2013), 2014, 514
12345