Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films

被引：1
|
作者：
Fonthal, F. [1 ]
Goyes, C. [1 ]
Rodriguez, A. [2 ]
机构：
[1] Univ Autonoma Occidente, Adv Mat Micro & Nanotechnol Grp, Calle 25 115-85,Km 2 Via Cali Jamundi, Cali, Colombia
[2] Univ Politecn Cataluna, Dept Elect Engn, Micro & Nanotechnol Grp, Barcelona 08074, Spain
来源：
CERMA 2008: ELECTRONICS, ROBOTICS AND AUTOMOTIVE MECHANICS CONFERENCE, PROCEEDINGS | 2008年
关键词：
Porous Silicon; Electrochemical etching; Electrical conductivity; Electrical equivalent circuit; Metal-semiconductor-metal structure;
D O I：
10.1109/CERMA.2008.62
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to obtain electronic devices based on PS,p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) 100 substrates. The beginning is obtaining good electrical contacts on porous layer, for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.
引用
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页码：3 / +
页数：3
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