Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films

被引：1

作者：

Fonthal, F. ^{[1
]}

Goyes, C. ^{[1
]}

Rodriguez, A. ^{[2
]}

机构：

[1] Univ Autonoma Occidente, Adv Mat Micro & Nanotechnol Grp, Calle 25 115-85,Km 2 Via Cali Jamundi, Cali, Colombia

[2] Univ Politecn Cataluna, Dept Elect Engn, Micro & Nanotechnol Grp, Barcelona 08074, Spain

来源：

CERMA 2008: ELECTRONICS, ROBOTICS AND AUTOMOTIVE MECHANICS CONFERENCE, PROCEEDINGS | 2008年

关键词：

Porous Silicon; Electrochemical etching; Electrical conductivity; Electrical equivalent circuit; Metal-semiconductor-metal structure;

D O I：

10.1109/CERMA.2008.62

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to obtain electronic devices based on PS,p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) 100 substrates. The beginning is obtaining good electrical contacts on porous layer, for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.

引用

页码：3 / +

页数：3

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