High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

被引：26
作者：
Chang, PC [1 ]
Chen, CH
Chang, SJ
Su, YK
Yu, CL
Huang, BR
Chen, PC
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
[4] Natl Yunlin Univ Sci & Technol, Dept & Inst Elect Engn, Yunlin, Taiwan
[5] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui 737, Taiwan
来源：
THIN SOLID FILMS | 2006年 / 498卷 / 1-2期
关键词：
GaN; photo-CVD; photodetector;
D O I：
10.1016/j.tsf.2005.07.094
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 x 10(4) for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 3 50 nm incident light wavelength. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：133 / 136
页数：4
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