Optical studies on AlGaN/InGaN/GaN single quantum-well structures under external strains

被引：0
|
作者：
Kurimoto, E
Takahashi, M
Harima, H
Mouri, H
Furukawa, K
Ishida, M
Taneya, M
机构：
[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan
[2] Sharp Co Ltd, Elect Components Labs, Tenri, Nara 6328567, Japan
[3] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence (PL) spectra from AlGaN/InGaN/GaN single quantum well structures with different In content in the InGaN well layer have been measured with applying biaxial tensile stresses by a central-flexure method for the purpose of studing piezoelectric-field effect on the well layer. The band-edge emission from the InGaN well layer showed linear variations against the applied stress with different coefficients depending on the In content. We obtained. e.g., +17.5 meV/GPa for an InGaN layer with 20% In content. Our result presents a direct evidence for the presence of piezoelectric field which depends on the In content.
引用
收藏
页码：103 / 106
页数：4
相关论文
共 50 条
  • [21] Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
    Park, Seoung-Hwan
    Ahn, Doyeol
    Park, Jongwoon
    Lee, Yong-Tak
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
  • [22] Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells
    Chichibu, Shigefusa F., 2000, JJAP, Tokyo, Japan (39):
  • [23] Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells
    Chichibu, SF
    Shikanai, A
    Deguchi, T
    Setoguchi, A
    Nakai, R
    Nakanishi, H
    Wada, K
    DenBaars, SP
    Sota, T
    Nakamura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2417 - 2424
  • [24] Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
    Li, W
    Bergman, P
    Monemar, B
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 1005 - 1007
  • [25] Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures
    Witzigmann, B.
    Laino, V.
    Luisier, A.
    Schwarz, U. T.
    Fischer, H.
    Feicht, G.
    Wegscheider, W.
    Rumboz, C.
    Lell, A.
    Haerle, V.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) : 1600 - 1602
  • [26] Resonant excitation photoluminescence studies of InGaN/GaN single quantum well structures
    Graham, D. M.
    Dawson, P.
    Godfrey, M. J.
    Kappers, M. J.
    Humphreys, C. J.
    APPLIED PHYSICS LETTERS, 2006, 89 (21)
  • [27] Prestrained effect on the emission properties of InGaN/GaN quantum-well structures
    Huang, Chi-Feng
    Tang, Tsung-Yi
    Huang, Jeng-Jie
    Shiao, Wen-Yu
    Yang, C. C.
    Hsu, Chih-Wei
    Chen, L. C.
    APPLIED PHYSICS LETTERS, 2006, 89 (05)
  • [28] Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures
    Jursenas, S
    Miasojedovas, S
    Kurilcik, G
    Zukauskas, A
    Feng, SW
    Cheng, YC
    Yang, CC
    Kuo, CT
    Tsang, JS
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2610 - 2613
  • [29] Optical Properties of Green InGaN/GaN Quantum-Well Light-Emitting Diodes with Embedded AlGaN δ Layer
    Park, Seoung-Hwan
    Lee, Yong-Tak
    Park, Jongwoon
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) : 226 - 230
  • [30] Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well
    Gundimeda, Abhiram
    Kusch, Gunnar
    Frentrup, Martin
    Kappers, Menno J.
    Wallis, David J.
    Oliver, Rachel A.
    NANOTECHNOLOGY, 2024, 35 (39)
12345