Optical studies on AlGaN/InGaN/GaN single quantum-well structures under external strains

被引：0

作者：

Kurimoto, E

Takahashi, M

Harima, H

Mouri, H

Furukawa, K

Ishida, M

Taneya, M

机构：

[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan

[2] Sharp Co Ltd, Elect Components Labs, Tenri, Nara 6328567, Japan

[3] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) spectra from AlGaN/InGaN/GaN single quantum well structures with different In content in the InGaN well layer have been measured with applying biaxial tensile stresses by a central-flexure method for the purpose of studing piezoelectric-field effect on the well layer. The band-edge emission from the InGaN well layer showed linear variations against the applied stress with different coefficients depending on the In content. We obtained. e.g., +17.5 meV/GPa for an InGaN layer with 20% In content. Our result presents a direct evidence for the presence of piezoelectric field which depends on the In content.

引用

页码：103 / 106

页数：4