Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

被引：142

作者：

Knutsen, K. E. ^{[1
]}

Galeckas, A. ^{[1
]}

Zubiaga, A. ^{[2
]}

Tuomisto, F. ^{[2
]}

Farlow, G. C. ^{[3
]}

Svensson, B. G. ^{[1
]}

Kuznetsov, A. Yu. ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0318 Oslo, Norway

[2] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland

[3] Wright State Univ, Dept Phys, Dayton, OH 45435 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 12期

关键词：

PHOTOLUMINESCENCE; LUMINESCENCE; CRYSTALS; ACCEPTOR; DEFECTS; ENERGY; COPPER; POINT; OXIDE;

D O I：

10.1103/PhysRevB.86.121203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at similar to 1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.

引用

页数：5

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