Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

被引：27

作者：

Bouzidi, C. ^{[1
]}

Elhouichet, H. ^{[1
]}

Moadhen, A. ^{[1
]}

Oueslati, M. ^{[1
]}

机构：

[1] Fac Sci Tunis, Unite Rech Spect Ramon, Dept Phys, Tunis 2092, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2009年 / 129卷 / 01期

关键词：

SnO2; Sol-gel; Erbium; Photoluminescence; Si nanocrystals; Sensitisation; THIN-FILMS; LUMINESCENCE PROPERTIES; ROOM-TEMPERATURE; SI NANOCRYSTALS; ENERGY-TRANSFER; SOLUTION-PHASE; PHOTOLUMINESCENCE; EXCITATION; IONS; ER3+;

D O I：

10.1016/j.jlumin.2008.07.017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SnO2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO2, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er3+ ions was found to be enhanced after doping SnO2 with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：30 / 33

页数：4

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