Separation of boron from silicon by steam-added electron beam melting

被引：10

作者：

Shi, Shuang ^{[1
,2
,3
]}

Guo, Xiaoliang ^{[3
]}

An, Guangye ^{[3
]}

Jiang, Dachuan ^{[1
,2
,3
]}

Qin, Shiqiang ^{[1
,2
]}

Meng, Jianxiong ^{[1
,2
]}

Li, Pengting ^{[1
,2
]}

Tan, Yi ^{[1
,2
]}

Asghar, H. M. Noor ul Huda Khan ^{[3
,4
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116023, Peoples R China

[2] Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian 116023, Peoples R China

[3] Dalian Univ Technol Qingdao, New Energy Mat & Technol Inst Ltd, Qingdao 266000, Peoples R China

[4] Balochistan Univ Informat Technol Engn & Manageme, Dept Phys, Quetta 87300, Pakistan

来源：

SEPARATION AND PURIFICATION TECHNOLOGY | 2019年 / 215卷

基金：

中国博士后科学基金;

关键词：

Solar-grade silicon; Boron removal; Electron beam melting; Oxygen self-circulating path; Photovoltaic; METALLURGICAL-GRADE SILICON; MOLTEN SILICON; MASS-TRANSFER; REMOVAL; PURIFICATION; PHOSPHORUS; IMPURITIES; GAS; MECHANISM; KINETICS;

D O I：

10.1016/j.seppur.2018.12.080

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Removal of boron from silicon is a tough task by traditional directional solidification and vacuum refining techniques, due to its large and inappropriate segregation coefficient and low saturated vapor pressure. At high temperature boron react with oxygen to form volatile boron oxides which can be evaporated. So, the removal procedure of boron from silicon melt is investigated by incorporating a small amount of water vapor above the melted surface. The results show that boron is oxidized to mainly form BO and evaporated with 28% removal efficiency by average. It is considered that oxygen atoms experience a series of physical and chemical processes, such as a chemical reaction in the bulk of the melt, evaporation from the melt surface, transportation across the gas phase and ionization due the electron beam, which is conducive to the continuous removal of boron.

引用

页码：242 / 248

页数：7

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