Detailed analysis of IMD in an LDMOS RF power amplifier

被引：0
|
作者：
Aikio, JP [1 ]
Rahkonen, T [1 ]
机构：
[1] Univ Oulu, Dept Elect & Informat Engn, Elect Lab, Oulu 90014, Finland
来源：
2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年
关键词：
distortion analysis; Volterra analysis; polynomial device model; RF power amplifier; harmonic-balance;
D O I：
10.1109/MWSYM.2005.1516788
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed analysis of an LDMOS RF power amplifier is presented. Analysis shows that intermodulation distortion (IMD) sweet spot is a result of a vector sum of several cancelling mechanisms. This can make the sweet spot sensitive to center frequency and bandwidth. The analysis technique is implemented on top of harmonic-balance (HB) simulation. The simulated large-signal voltage and current spectra are used to fit polynomial models of the nonlinear I-V and Q-V sources of the device. The contributions of different nonlinearities can be calculated by using the polynomial model. The analysis relies on the accuracy of the simulation model, but the overall simulated results match well with the measurements.
引用
收藏
页码：967 / 970
页数：4
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