Persistent phosphorescence in Ce-doped Lu2SiO5

被引：14

作者：

Yamaga, Mitsuo ^{[1
]}

Ohsumi, Yusuke ^{[1
]}

Nakayama, Tomomi ^{[1
]}

Han, Thomas P. J. ^{[2
]}

机构：

[1] Gifu Univ, Dept Math & Design Engn, Gifu 5011193, Japan

[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

来源：

OPTICAL MATERIALS EXPRESS | 2012年 / 2卷 / 04期

关键词：

CE3+-DOPED CA2AL2SIO7;

D O I：

10.1364/OME.2.000413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxide crystals doped with Ce3+ are useful in areas such as scintillators and passive optical sources. Scintillator materials require high light-yield and fast luminescence decay time. However, when the crystalline quality is degraded by defects created during the crystal growth process, afterglow from the crystals is observed. The persistent phosphorescence observed in Lu2SiO5 doped with Ce3+ ions has been investigated in detail and a model is proposed to explain the mechanism responsible for the phosphorescence. (C) 2012 Optical Society of America

引用

页码：413 / 419

页数：7

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