Dielectric properties of Ba(Zn1/3Ta2/3)O3 thin films on Pt-coated Si substrates

被引：9

作者：

Nedelcu, L. ^{[1
]}

Mandache, N. B. ^{[2
]}

Toacsan, M. I. ^{[1
]}

Vlaicu, A. M. ^{[1
]}

Banciu, M. G. ^{[1
]}

Ioachim, A. ^{[1
]}

Gherendi, F. ^{[2
]}

Luculescu, C. R. ^{[2
]}

Nistor, M. ^{[2
]}

机构：

[1] Natl Inst Mat Phys, Multifunct Mat & Struct Lab, Bucharest 077125, Romania

[2] Natl Inst Lasers Plasmas & Radiat Phys, Plasma Phys & Nucl Fus Lab, Bucharest 077125, Romania

来源：

THIN SOLID FILMS | 2012年 / 522卷

关键词：

Barium zinc tantalate; Thin films; Pulsed electron beam deposition; Annealing; Dielectric properties; MICROWAVE; CERAMICS; RELAXATION; RESONATORS; GROWTH;

D O I：

10.1016/j.tsf.2012.09.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba(Zn1/3Ta2/3)O-3 (BZT) thin films were grown on Pt-coated Si substrates at 500 degrees C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 degrees C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the -100 to + 100 degrees C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/degrees C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 degrees C. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：112 / 116

页数：5

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