Dielectric properties of Ba(Zn1/3Ta2/3)O3 thin films on Pt-coated Si substrates

被引：9

作者：

Nedelcu, L. ^{[1
]}

Mandache, N. B. ^{[2
]}

Toacsan, M. I. ^{[1
]}

Vlaicu, A. M. ^{[1
]}

Banciu, M. G. ^{[1
]}

Ioachim, A. ^{[1
]}

Gherendi, F. ^{[2
]}

Luculescu, C. R. ^{[2
]}

Nistor, M. ^{[2
]}

机构：

[1] Natl Inst Mat Phys, Multifunct Mat & Struct Lab, Bucharest 077125, Romania

[2] Natl Inst Lasers Plasmas & Radiat Phys, Plasma Phys & Nucl Fus Lab, Bucharest 077125, Romania

来源：

THIN SOLID FILMS | 2012年 / 522卷

关键词：

Barium zinc tantalate; Thin films; Pulsed electron beam deposition; Annealing; Dielectric properties; MICROWAVE; CERAMICS; RELAXATION; RESONATORS; GROWTH;

D O I：

10.1016/j.tsf.2012.09.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba(Zn1/3Ta2/3)O-3 (BZT) thin films were grown on Pt-coated Si substrates at 500 degrees C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 degrees C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the -100 to + 100 degrees C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/degrees C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 degrees C. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：112 / 116

页数：5

共 35 条

[1] Ba(Zn1/3Ta2/3)O3 Ceramics for Microwave and Millimeter-wave Applications [J].

Alexandru, H. V. ;

Ioachim, A. ;

Toacsan, M. I. ;

Nedelcu, L. ;

Banciu, M. G. ;

Berbecaru, C. ;

Voicu, G. ;

Jinga, S. ;

Andronescu, E. .

INTERDISCIPLINARY TRANSPORT PHENOMENA: FLUID, THERMAL, BIOLOGICAL, MATERIALS, AND SPACE SCIENCES, 2009, 1161 :549-553

[2] SPACE-CHARGE RELAXATION IN PEROVSKITES [J].

BIDAULT, O ;

GOUX, P ;

KCHIKECH, M ;

BELKAOUMI, M ;

MAGLIONE, M .

PHYSICAL REVIEW B, 1994, 49 (12) :7868-7873

[3] First-principles study of the dielectric properties of Ba(Zn1/3Nb2/3)O3 and Ba(Mg1/3Nb2/3)O3 [J].

Dai, Yadong ;

Zhao, Guanghui ;

Liu, Hanxing .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)

[4] ORDERING IN COMPOUNDS OF A(B'0.33TA0.67)O3TYPE [J].

GALASSO, F ;

PYLE, J .

INORGANIC CHEMISTRY, 1963, 2 (03) :482-&

[5] SUBSTITUTION IN THE OCTAHEDRALLY COORDINATED CATION POSITIONS IN COMPOUNDS OF THE PEROVSKITE TYPE [J].

GALASSO, F ;

KATZ, L ;

WARD, R .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1959, 81 (04) :820-823

[6] Recent progress on the dielectric properties of dielectric resonator materials with their applications from microwave to optical frequencies [J].

Higuchi, Y ;

Tamura, H .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2003, 23 (14) :2683-2688

[7] The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method [J].

Hu, Wencheng ;

Yang, Chuanren ;

Zhang, Wanli ;

Liu, Guijun ;

Dong, Dong .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2006, 39 (03) :293-298

[8] Ceramic dielectric film for microwave filter deposited at room temperature [J].

Imanaka, Yoshihiko ;

Takenouchi, Masatoshi ;

Akedo, Jun .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E1313-E1319

[9] Synthesis and properties of Ba(Zn1/3Ta2/3)O3 for microwave and millimeter wave applications [J].

Ioachim, A. ;

Toacsan, M. I. ;

Banciu, M. G. ;

Nedelcu, L. ;

Dutu, C. A. ;

Alexandru, H. V. ;

Antohe, S. ;

Andronescu, E. ;

Jinga, S. ;

Nita, P. .

THIN SOLID FILMS, 2008, 516 (07) :1558-1562

[10]

Ioachim A, 2008, J OPTOELECTRON ADV M, V10, P209

← 1 2 3 4 →