Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

被引：167

作者：

Bark, C. W. ^{[1
]}

Sharma, P. ^{[2
]}

Wang, Y. ^{[2
]}

Baek, S. H. ^{[1
]}

Lee, S. ^{[1
]}

Ryu, S. ^{[1
]}

Folkman, C. M. ^{[1
]}

Paudel, T. R. ^{[2
]}

Kumar, A. ^{[4
]}

Kalinin, S. V. ^{[4
]}

Sokolov, A. ^{[2
]}

Tsymbal, E. Y. ^{[2
]}

Rzchowski, M. S. ^{[3
]}

Gruverman, A. ^{[2
]}

Eom, C. B. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[2] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 04期

基金：

美国国家科学基金会;

关键词：

Heterointerfaces; complex oxides; oxygen vacancies; piezoresponse force microscopy; 2-DIMENSIONAL ELECTRON-GAS; FORCE MICROSCOPY; INTERFACE; NANOSCALE; SURFACE; HETEROINTERFACE; FERROELECTRICS; MOBILITY; STATE; FILMS;

D O I：

10.1021/nl3001088

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

引用

页码：1765 / 1771

页数：7

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