Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

被引：78

作者：

Cho, Moonju ^{[1
]}

Roussel, Philippe ^{[1
]}

Kaczer, Ben ^{[1
]}

Degraeve, Robin ^{[1
]}

Franco, Jacopo ^{[1
]}

Aoulaiche, Marc ^{[1
]}

Chiarella, Thomas ^{[1
]}

Kauerauf, Thomas ^{[1
]}

Horiguchi, Naoto ^{[1
]}

Groeseneken, Guido ^{[1
,2
]}

机构：

[1] Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期

关键词：

Charge trapping; FinFET; hot carrier; logic device; multigate FET;

D O I：

10.1109/TED.2013.2285245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V-G similar to V-D/2). At higher V-G closer to V-D, cold and hot carrier injection to the oxide bulk defect increases and dominates at the V-G = V-D stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V-G and highly at V-G = V-D, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.

引用

页码：4002 / 4007

页数：6

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