Dimension Dependent Silicon Photonics Rib Waveguide Characterisation

被引:0
作者
Chen, A. T. C. [1 ]
Uddin, M. Rakib [1 ]
Law, F. K. [1 ]
Lingas, Nurazmina [1 ]
机构
[1] Univ Teknol Brunei UTB, Fac Engn, Elect & Elect Engn Programme Area, Gadong, Brunei
来源
2020 22ND INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION TECHNOLOGY (ICACT): DIGITAL SECURITY GLOBAL AGENDA FOR SAFE SOCIETY! | 2020年
关键词
Silicon; rib waveguide; PN junction; ring resonator; MODE;
D O I
10.23919/icact48636.2020.9061436
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In this paper, SOI rib waveguides with the variation of core dimensions have been demonstrated. The analysis of a silicon rib waveguide is performed by simulating the SOI waveguide containing a forward biased PN junction by applying the electro-optic carrier - injection effect via electric voltage changes. The dimensions of the waveguide/ring resonator have been altered. The dimensions of the waveguide/ring resonator include the width of the core waveguide (W), the height of the core waveguide (Hc), the rib thickness (Hr) and the height of buried oxide (Ho). Thus, in this research, the dimensions of the waveguide/ring resonator will be varied at distinct value with a specific interval in order to investigate the performance of the micro -ring resonator. This is because as the dimensions of the waveguide vary, its resonance wavelength will be change and thus shifting of resonance will occur. The simulation generates refractive index of the waveguide with respect to the applied voltage and refractive index, loss, gain and dispersion of the waveguide with respect to wavelength.
引用
收藏
页码:437 / 441
页数:5
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