Lithography-Free Fabrication of Core Shell GaAs Nanowire Tunnel Diodes

被引：13

作者：

Darbandi, A. ^{[1
]}

Kavanagh, K. L. ^{[1
]}

Watkins, S. P. ^{[1
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

NANO LETTERS | 2015年 / 15卷 / 08期

基金：

加拿大自然科学与工程研究理事会;

关键词：

GaAs; nanowire; core-shell; tunnel diodes; metalorganic vapor phase epitaxy; FIELD-EFFECT TRANSISTORS; ESAKI DIODES;

D O I：

10.1021/acs.nanolett.5b01795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor liquid solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core shell photovoltaics and tunnel field effect transistors.

引用

页码：5408 / 5413

页数：6

共 19 条

[1] Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes [J].