Effects of La3+ substitution on structure and temperature dependence of electrical properties of CaBi4Ti4O15-Bi4Ti3O12 ceramics

被引：13
作者：
Fei, Lingjuan [1 ,2 ]
Zhou, Zhiyong [1 ]
Hui, Shipeng [1 ,2 ]
Dong, Xianlin [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 09期
基金：
中国国家自然科学基金;
关键词：
INTERGROWTH BI2WO6-BI3TINBO9 FERROELECTRICS; DOPED BI4TI3O12-SRBI4TI4O15; PIEZOELECTRIC PROPERTIES; RELAXOR BEHAVIOR; PHOTOLUMINESCENCE; SCATTERING; SENSORS;
D O I：
10.1007/s10854-015-3299-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Structure and temperature dependence of electrical properties of Ca(Bi,La)(4)Ti4O15-(Bi,La)(4)Ti3O12 (CBT-BIT-xLa) ceramics were studied. With La3+ doping content increasing, the samples exhibited diffused dielectric constant anomalies, and the Curie temperature (T-c) decreased. Meanwhile, the dielectric loss of CBT-BIT-xLa was reduced. CBT-BIT-0.8La performed an improved piezoelectric constant (d(33)) value of 23.4 pC/N and remained until the temperature increased to 500 A degrees C. In addition, CBT-BIT-0.8La performed an enhanced rho(dc) value of 3.26 x 10(15) Omega cm, at room temperature. CBT-BIT-0.8La showed clearly higher dc resistivity (rho(dc)) than CBT-BIT, even with increasing the temperature to 600 A degrees C.
引用
收藏
页码：6843 / 6847
页数：5
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