Effects of La3+ substitution on structure and temperature dependence of electrical properties of CaBi4Ti4O15-Bi4Ti3O12 ceramics

被引：11

作者：

Fei, Lingjuan ^{[1
,2
]}

Zhou, Zhiyong ^{[1
]}

Hui, Shipeng ^{[1
,2
]}

Dong, Xianlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 09期

基金：

中国国家自然科学基金;

关键词：

INTERGROWTH BI2WO6-BI3TINBO9 FERROELECTRICS; DOPED BI4TI3O12-SRBI4TI4O15; PIEZOELECTRIC PROPERTIES; RELAXOR BEHAVIOR; PHOTOLUMINESCENCE; SCATTERING; SENSORS;

D O I：

10.1007/s10854-015-3299-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Structure and temperature dependence of electrical properties of Ca(Bi,La)(4)Ti4O15-(Bi,La)(4)Ti3O12 (CBT-BIT-xLa) ceramics were studied. With La3+ doping content increasing, the samples exhibited diffused dielectric constant anomalies, and the Curie temperature (T-c) decreased. Meanwhile, the dielectric loss of CBT-BIT-xLa was reduced. CBT-BIT-0.8La performed an improved piezoelectric constant (d(33)) value of 23.4 pC/N and remained until the temperature increased to 500 A degrees C. In addition, CBT-BIT-0.8La performed an enhanced rho(dc) value of 3.26 x 10(15) Omega cm, at room temperature. CBT-BIT-0.8La showed clearly higher dc resistivity (rho(dc)) than CBT-BIT, even with increasing the temperature to 600 A degrees C.

引用

页码：6843 / 6847

页数：5

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