Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

被引:140
作者
Cheng, Chia-Chin [1 ]
Lu, Ang-Yu [2 ]
Tseng, Chien-Chih [2 ]
Yang, Xiulin [2 ]
Hedhili, Mohamed Nejib [2 ]
Chen, Min-Cheng [3 ]
Wei, Kung-Hwa [1 ]
Li, Lain-Jong [2 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[3] Natl Appl Res Labs, Nat Nano Device Labs, Hsinchu 300, Taiwan
关键词
Hydrogen evolution reaction; MoS2; Electrolysis; Catalysis; Transition metal dichalcogenides; EDGE SITES; EFFICIENT ELECTROCATALYST; ULTRATHIN NANOSHEETS; CARBON CLOTH; EVOLUTION; NANOPARTICLES; GROWTH; GRAPHENE; LAYERS;
D O I
10.1016/j.nanoen.2016.09.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach using a remote hydrogen-plasma process to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H-2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:846 / 852
页数:7
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