DRIE OF FUSED SILICA

被引：0

作者：

Cao, Zongliang ^{[1
]}

VanDerElzen, Brian ^{[1
]}

Owen, Kevin J. ^{[1
]}

Yan, Jialiang ^{[1
]}

He, Guohong ^{[1
]}

Peterson, Rebecca L. ^{[1
]}

Grimard, Dennis ^{[1
]}

Najafi, Khalil ^{[1
]}

机构：

[1] Univ Michigan, Ctr Wireless Integrated Micro Sensing & Syst WIMS, Ann Arbor, MI 48109 USA

来源：

26TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2013) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-mu m mask opening is obtained. SU-8 masks also achieve high aspect ratios of 4.5:1 for 20-mu m wide trenches, with mask selectivity of similar to 2:1. However the polymeric masks cause greater FS sidewall roughness.

引用

页码：361 / 364

页数：4

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