Highly Mg-doped GaN thin film grown by RF plasma-assisted molecular beam epitaxy

被引：0
作者：
Chin, C. W. [1 ]
Hassan, Z. [1 ]
Yam, F. K. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2008年 / 2卷 / 09期
关键词：
p-type GaN; RF-MBE; carrier concenteration; Hall effect; ohmic contact;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam eapitaxy (RF-MBE). Hall effect measurement shows that the film was highly doped with carrier concentration of 6.58 x 10(18) cm(-3). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on sapphire substrate. For the photoluminescence (PL) measurement, a sharp and intense peak at 363.8 nm indicates that the sample is of high optical quality. The presence of the peak at 658.4 cm(-1) in Raman measurement confirmed that our p-type GaN sample was highly doped with Mg. Low resistance ohmic contacts on p-type GaN utilizing Ni/Ag metallization were fabricated and characterized. A good ohmic contact with a specific contact resistance as low as 8.5 x 10(-3) Omega cm(2) was achieved without any annealing treatments.
引用
收藏
页码：533 / 536
页数：4
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共 22 条
  • [1] Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
    Adivarahan, V
    Lunev, A
    Khan, MA
    Yang, J
    Simin, G
    Shur, MS
    Gaska, R
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2781 - 2783
  • [2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
    AMANO, H
    SAWAKI, N
    AKASAKI, I
    TOYODA, Y
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
  • [3] Study of oxygen chemisorption on the GaN(0001)-(1x1) surface
    Bermudez, VM
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 1190 - 1200
  • [4] Interplay of electrons and phonons in heavily doped GaN epilayers
    Demangeot, F
    Frandon, J
    Renucci, MA
    Meny, C
    Briot, O
    Aulombard, RL
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1305 - 1309
  • [5] Molecular beam epitaxy growth of nitride materials
    Grandjean, N
    Massies, J
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 39 - 46
  • [6] Local vibrational modes as a probe of activation process in p-type GaN
    Harima, H
    Inoue, T
    Nakashima, S
    Ishida, M
    Taneya, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1383 - 1385
  • [7] Thermal stability of Ni/Ag contacts on p-type GaN
    Hassan, Z
    Lee, YC
    Yam, FK
    Yap, ZJ
    Zainal, N
    Abu Hassan, H
    Ibrahim, K
    [J]. 5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, : 2528 - 2532
  • [8] Low-resistance ohmic contacts to p-type GaN
    Ho, JK
    Jong, CS
    Chiu, CC
    Huang, CN
    Chen, CY
    Shih, KK
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1275 - 1277
  • [9] Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN
    Jang, JS
    Seong, TY
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2743 - 2745
  • [10] Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
    Kaschner, A
    Siegle, H
    Kaczmarczyk, G
    Strassburg, M
    Hoffmann, A
    Thomsen, C
    Birkle, U
    Einfeldt, S
    Hommel, D
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3281 - 3283
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