Influence of an interface domain wall on spin-valve giant magnetoresistance

被引：6

作者：

Hauet, T. ^{[1
,2
,3
]}

Montaigne, F. ^{[1
,2
]}

Hehn, M. ^{[1
,2
]}

Henry, Y. ^{[4
,5
]}

Mangin, S. ^{[1
,2
]}

机构：

[1] Nancy Univ, LPM, F-54506 Vandoeuvre Les Nancy, France

[2] CNRS, F-54506 Vandoeuvre Les Nancy, France

[3] Hitachi GST, San Jose, CA 95135 USA

[4] CNRS, IPCMS, F-67037 Strasbourg 2, France

[5] Univ Strasbourg 1, F-67037 Strasbourg 2, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

amorphous magnetic materials; copper; exchange interactions (electron); ferrimagnetic materials; ferromagnetic materials; gadolinium alloys; giant magnetoresistance; interface magnetism; iron alloys; magnetic domain walls; spin valves;

D O I：

10.1063/1.3041640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetotransport properties of a Gd(40)Fe(60)/Gd(10)Fe(90)/Cu/Gd(40)Fe(60) spin-valve based on amorphous ferrimagnetic GdFe layers are reported. The Gd(40)Fe(60)/Gd(10)Fe(90) bilayer is an exchange spring structure that allows an interfacial domain wall to be controlled by an applied field. As this domain wall is nucleated, compressed, and annihilated, changes in the spin-valve current-in-plane magnetoresistance are observed. After separating the various magnetoresistance contributions we could deduce the effect of the interface domain wall on both the giant and anisotropic magnetoresistances.

引用

页数：3

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