NbSi Barrier Junctions Tuned for Metrological Applications up to 70 GHz: 20 V Arrays for Programmable Josephson Voltage Standards

被引:37
作者
Mueller, F. [1 ]
Scheller, T. [1 ]
Wendisch, R. [1 ]
Behr, R. [1 ]
Kieler, O. [1 ]
Palafox, L. [1 ]
Kohlmann, J. [1 ]
机构
[1] Phys Tech Bundesanstalt, D-38126 Braunschweig, Germany
关键词
Amorphous NbSi barrier; Josephson junctions; programmable Josephson voltage standard; SINIS junction; SIS junction; SNS junction; SQUID; METAL-INSULATOR-TRANSITION;
D O I
10.1109/TASC.2012.2235895
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
PTB started using the robust NbxSi1-x barrier junction technology for the fabrication of large arrays for the Programmable Josephson Voltage Standard (PJVS) and for the Josephson Arbitrary Waveform Synthesizer 3 years ago. We demonstrate how Nb-doping of the amorphous Si barrier causes the transition from an underdamped to a desired overdamped junction behavior. Special dc SQUIDs have been used to evaluate junction capacitance and noise properties. The critical current of small junctions as a function of applied magnetic field has been investigated. On the basis of an existing 70 GHz design previously used for 10 V PJVS chips, we fabricated for the first time 20 V circuits with nearly 140 000 double-stacked Josephson junctions. A direct on-chip comparison between the two 10 V halves of the binary-divided array confirmed the metrological suitability of the 20 V circuits for dc and ac applications.
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页数:5
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共 23 条
  • [1] Aslamazov L. G., 1984, Soviet Physics - JETP, V59, P887
  • [2] Co-sputtered amorphous NbxSi1-x barriers for Josephson-junction circuits
    Baek, Burm
    Dresselhaus, Paul D.
    Benz, Samuel P.
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2006, 16 (04) : 1966 - 1970
  • [3] Barone A., 1982, PHYS APPL JOSEPHSON
  • [4] HIGH-RESISTANCE SNS SANDWICH-TYPE JOSEPHSON-JUNCTIONS
    BARRERA, AS
    BEASLEY, MR
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) : 866 - 868
  • [5] Development and metrological applications of Josephson arrays at PTB
    Behr, Ralf
    Kieler, Oliver
    Kohlmann, Johannes
    Mueller, Franz
    Palafox, Luis
    [J]. MEASUREMENT SCIENCE AND TECHNOLOGY, 2012, 23 (12)
  • [6] Design of SNS Josephson Arrays for high voltage applications
    Dresselhaus, P. D.
    Benz, S. P.
    Burroughs, C. J.
    Bergren, N. E.
    Chong, Y.
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2007, 17 (02) : 173 - 176
  • [7] 10 Volt Programmable Josephson Voltage Standard Circuits Using NbSi-Barrier Junctions
    Dresselhaus, Paul D.
    Elsbury, Michael M.
    Olaya, David
    Burroughs, Charles J.
    Benz, Samuel P.
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2011, 21 (03) : 693 - 696
  • [8] Drung D., 2012, COMMUNICATION
  • [9] ELECTRICAL-PROPERTIES OF ION-DOPED AMORPHOUS-SILICON
    DVURECHENSKII, AV
    DRAVIN, VA
    YAKIMOV, AI
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (02): : 519 - 527
  • [10] Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer
    Gudkov, A. L.
    Kupriyanov, M. Yu
    Samus', A. N.
    [J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2012, 114 (05) : 818 - 829