The linear optical response of reconstructed Sn/Si(111) surfaces

被引:2
作者
Anyele, HT [1 ]
Shen, TH [1 ]
Matthai, CC [1 ]
机构
[1] UNIV LEEDS,DEPT PHYS,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
关键词
D O I
10.1088/0953-8984/8/23/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have used the self-consistent tight-binding method in the extended Huckel approximation to calculate the electronic band structure and surface dielectric function of three Sn/Si(111) reconstructed surfaces. We show that the anisotropy in the imaginary part of the surface dielectric function and the corresponding reflection spectra as determined from the self-consistent wavefunctions for the three surfaces are quite different. This suggests that the recently developed technique of reflection anisotropy spectroscopy can be used in studying the change in surface reconstruction with increased Sn deposition.
引用
收藏
页码:4139 / 4144
页数:6
相关论文
共 10 条
[1]  
ANYELE HT, 1993, J VAC SCI TECHNOL B, V11, P1559
[2]   SURFACE DIELECTRIC ANISOTROPIES AND PHASE-DIAGRAMS OF (001) GAAS [J].
ASPNES, DE ;
FLOREZ, LT ;
STUDNA, AA ;
HARBISON, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :936-939
[3]   THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES [J].
CHANG, YC ;
ASPNES, DE .
PHYSICAL REVIEW B, 1990, 41 (17) :12002-12012
[4]   OPTICAL PROPERTIES OF AG AND CU [J].
EHRENREICH, H ;
PHILIPP, HR .
PHYSICAL REVIEW, 1962, 128 (04) :1622-+
[5]   REFLECTANCE-DIFFERENCE SPECTROSCOPY OF (001) GAAS-SURFACES IN ULTRAHIGH-VACUUM [J].
KAMIYA, I ;
ASPNES, DE ;
FLOREZ, LT ;
HARBISON, JP .
PHYSICAL REVIEW B, 1992, 46 (24) :15894-15904
[6]   Reflectance anisotropy of the GaAs(001) (2x4) surface: Ab initio calculations [J].
Morris, SJ ;
Bass, JM ;
Matthai, CC .
PHYSICAL REVIEW B, 1995, 52 (23) :16739-16743
[7]   OPTICAL IN-SITU SURFACE CONTROL DURING MOVPE AND MBE GROWTH [J].
RICHTER, W .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673) :453-466
[8]   INSITU OPTICAL CHARACTERIZATION WITH MONOLAYER SENSITIVITY - THE AS-TERMINATED SI(111) SURFACE [J].
ROSSOW, U ;
FROTSCHER, U ;
RICHTER, W ;
ZAHN, DRT .
SURFACE SCIENCE, 1993, 287 :718-721
[9]   CALCULATION OF THE OPTICAL-PROPERTIES OF AS MOLECULES ON SI SUBSTRATES [J].
SHEN, TH ;
MATTHAI, CC .
SURFACE SCIENCE, 1993, 287 :672-675
[10]   EPITAXIAL-GROWTH OF SN ON SI(111) - A DIRECT ATOMIC-STRUCTURE DETERMINATION OF THE (2-SQUARE-ROOT-3X2-SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTED SURFACE [J].
TORNEVIK, C ;
HAMMAR, M ;
NILSSON, NG ;
FLODSTROM, SA .
PHYSICAL REVIEW B, 1991, 44 (23) :13144-13147